Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence
Journal article, 2015

InP1-xBix epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InP1-xBix films Photoluminescence (PL) was investigated. N-type doping in the InP1-xBix epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved.


P. Wang

Chinese Academy of Sciences

W. W. Pan

Chinese Academy of Sciences

K. Wang

Chinese Academy of Sciences

X. Wu

Chinese Academy of Sciences

L. Yue

Chinese Academy of Sciences

Q. Gong

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

AIP Advances

2158-3226 (ISSN) 21583226 (eISSN)

Vol. 5 12 Art. no. 127104- 127104

Subject Categories

Materials Engineering



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