Cold-electron bolometer array integrated with a 350 GHz cross-slot antenna
Paper in proceeding, 2010

Two series/parallel arrays of Cold-Electron Bolometers (CEB) with Superconductor-Insulator-Normal (SIN) tunnel junctions were integrated in orthogonal ports of a cross-slot antenna. The receiving system was designed for polarisation measurements in a 350 GHz frequency band with JFET readout at the BOOMERanG-FG balloon telescope. Each orthogonal array consists of 10 cold-electron bolometers connected in parallel for RF signal and in series for DC signal. The array was designed to increase the output resistance by a factor of 102 in comparison to a single CEB, for matching with JFET readout while maintaining the same conditions for RF coupling. The dynamic resistance of such array is 1 M5 at the bias point of maximal response. For the input microwave signal bolometers are connected in parallel. This provides matching to the 30 input impedance of a cross-slot antenna on Si substrate. The array of bolometers has a saturation power 10 times higher than a single bolometer. This significantly increases the dynamic range. With a measured temperature response of 8.8 μV/mK, a total absorber volume of 0.08 μm3, and an output noise of about 11 nV/Hz1/2, we estimated the dark electrical noise equivalent power as NEP=6*10-18 W/Hz1/2 at 280 mK. The optical response was measured using both hot/cold loads and a backward wave oscillator as sources of radiation.

Electric resistance

Infrared detectors

Backward wave oscillator

Output resistance

Dynamic resistance

Cold electron bolometers

Slot antennas

Measured temperatures


Electrical noise

Frequency bands

Receiving system

Microwave signals


Mikhail Tarasov

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Leonid Kuzmin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Natalia Kaurova

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Ernst Otto

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

G. Yassin

University of Oxford

P. D. Bernardis

Sapienza University of Rome

21st International Symposium on Space Terahertz Technology 2010, ISSTT 2010; Oxford; United Kingdom; 23 March 2010 through 25 March 2010

9781617823626 (ISBN)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering



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