Photoluminescence from tensile-strained Ge quantum dots
Paper in proceedings, 2016

It has been theoretically predicted that 1.9% biaxial tensile strain can convert Ge [1], which is compatible with Si CMOS technology, into a direct band-gap semiconductor, making it a candidate material for light sources on Si [2, 3]. Combining the advantage of tensile strain with quantum dot (QD), we proposed that tensile-strained QD is a new route toward light emission from Ge [4]. In this work, we chose In0.52Al0.48As, which is lattice matched to InP, as barrier layer and grew the structure by molecular beam epitaxy (MBE). Photoluminescence (PL) was successfully achieved at room temperature.

Author

Q Chen

Chinese Academy of Sciences

X Chen

Chinese Academy of Sciences

Z. Zhang

Chinese Academy of Sciences

Y Song

Chinese Academy of Sciences

P. Wang

Chinese Academy of Sciences

J. J. Liu

Chinese Academy of Sciences

P. F. Lu

Beijing University of Posts and Telecommunications (BUPT)

Y. Li

Chinese Academy of Sciences

Q Gong

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

The 2016 IEEE Summer Topical Meeting Series, SUM 2016, Newport Beach, USA, July 11th-13th, 2016

120-121

Subject Categories

Physical Sciences

DOI

10.1109/PHOSST.2016.7548749

ISBN

978-1-5090-1900-7

More information

Latest update

5/30/2018