Ag-catalyzed InAs nanowires grown on transferable graphite flakes
Journal article, 2016
Semiconducting nanowires grown by quasi-van-der-Waals epitaxy on graphite flakes are a new class of hybrid materials that hold promise for scalable nanostructured devices within opto-electronics. Here we report on high aspect ratio and stacking fault free Ag-seeded InAs nanowires grown on exfoliated graphite flakes by molecular beam epitaxy. Ag catalyzes the InAs nanowire growth selectively on the graphite flakes and not on the underlying InAs substrates. This allows for easy transfer of the flexible graphite flakes with as-grown nanowire ensembles to arbitrary substrates by a micro-needle manipulator. Besides the possibilities for fabricating novel nanostructure device designs, we show how this method is used to study the parasitic growth and bicrystal match between the graphite flake and the nanowires by transmission electron microscopy.
nanowire
graphene
InAs
Ag-seeded nanowire
molecular beam epitaxy
hybrid structures
Author
J. Meyer-Holdt
Chinese Academy of Sciences
Niels Bohr Institute
T. Kanne
Niels Bohr Institute
J. E. Sestoft
Niels Bohr Institute
A. Gejl
Niels Bohr Institute
Lunjie Zeng
Chalmers, Physics, Eva Olsson Group
E. Johnson
Niels Bohr Institute
Technical University of Denmark (DTU)
Eva Olsson
Chalmers, Physics, Eva Olsson Group
J. Nygard
Niels Bohr Institute
P. Krogstrup
Niels Bohr Institute
Nanotechnology
0957-4484 (ISSN) 1361-6528 (eISSN)
Vol. 27 36 365603Subject Categories
Materials Engineering
Nano Technology
Condensed Matter Physics
DOI
10.1088/0957-4484/27/36/365603
PubMed
27479073