Non-contact scanning probe technique for electric field measurements based on nanowire field-effect transistor
Journal article, 2017

We report on the new active tip for scanning probe microscopy allowing the simultaneous measurements of surface topography and its potential profile. We designed and fabricated a field-effect transistor with nanowire channel located on the apex of silicon-on-insulator small chip. The field-effect transistor with nanowire channel was selected due to its extremely high electric field sensitivity even at room temperature. We developed the scanning probe operated in the tuning fork regime and demonstrated its reasonable spatial and field resolution. The proposed device can be a unique tool for high-sensitive, high-resolution, non-destructive potential profile mapping of nanoscale objects in physics, biology and material science. We discuss the ways to optimize the sensor charge sensitivity to the theoretical limit which is 10? 3 e/Hz?1/2 at room temperature.

Author

Artem Trifonov

Moscow State University

D. E. Presnov

Moscow State University

I. V. Bozhev

Moscow State University

D. A. Evplov

AIST-NT Inc.

Vincent Desmaris

Chalmers, Earth and Space Sciences, Advanced Receiver Development

V. A. Krupenin

Moscow State University

Ultramicroscopy

0304-3991 (ISSN)

Vol. 179 Augusti 33-40

Areas of Advance

Building Futures (2010-2018)

Energy

Subject Categories

Physical Sciences

Astronomy, Astrophysics and Cosmology

Infrastructure

Onsala Space Observatory

DOI

10.1016/j.ultramic.2017.03.030

More information

Latest update

6/12/2018