GaN vertical-cavity surface-emitting laser with a high-contrast grating reflector
Paper in proceedings, 2018
rested directly on the n-GaN without an airgap or the use of any DBR layers to boost the reflectivity. The full VCSEL
structure was optically pumped at room temperature and showed a lasing threshold of approximately 0.69MW/cm2 and a
lasing wavelength at 369.1 nm. This first demonstration of lasing in a HCG GaN-based VCSEL opens up the possibility
to explore all the potential benefits of HCGs in the blue and ultraviolet spectral regime.
TiO2
vertical cavity surface emitting laser (VCSEL)
high contrast grating (HCG)
GaN
Author
Tsu-Chi Chang
Shuo-Yi Kuo
Seyed Ehsan Hashemi
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Åsa Haglund
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Tien-chang Lu
Proc. SPIE 10542, High Contrast Metastructures VII
Vol. 10542 105420T
San Fransisco, USA,
Ett komponent-fysikaliskt perspektiv på blå mikrokavitets-lasrar och resonanta lysdiodrar i III-nitrid-material
Swedish Energy Agency, 2015-01-01 -- 2018-12-31.
UV-blue-green resonant light-emitters
Swedish Foundation for Strategic Research (SSF), 2014-09-01 -- 2019-08-31.
Areas of Advance
Nanoscience and Nanotechnology (2010-2017)
Subject Categories
Other Physics Topics
Electrical Engineering, Electronic Engineering, Information Engineering
Nano Technology
Condensed Matter Physics
Infrastructure
Nanofabrication Laboratory
DOI
10.1117/12.2289318