SINIS bolometer with a suspended absorber
Paper in proceeding, 2018
We have developed a Superconductor-Insulator-Normal Metal-Insulator-Superconductor (SINIS) bolometer with a suspended normal metal bridge. The suspended bridge acts as a bolometric absorber with reduced heat losses to the substrate. Such bolometers were characterized at 100-350 mK bath temperatures and electrical responsivity of over 10 9 V/W was measured by dc heating the absorber through additional contacts. Suspended bolometers were also integrated in planar twin-slot and log-periodic antennas for operation in the submillimetre-band of radiation. The measured voltage response to radiation at 300 GHz and at 100 mK bath temperature is 3∗10 8 V/W and a current response is 1.1∗10 4 A/W which corresponds to a quantum efficiency of ∼15 electrons per photon. An important feature of such suspended bolometers is the thermalization of electrons in the absorber heated by optical radiation, which in turn provides better quantum efficiency. This has been confirmed by comparison of bolometric response to dc and rf heating. We investigate the performance of direct SN traps and NIS traps with a tunnel barrier between the superconductor and normal metal trap. Increasing the volume of superconducting electrode helps to reduce overheating of superconductor. Influence of Andreev reflection and Kapitza resistance, as well as electron-phonon heat conductivity and thermal conductivity of N-wiring are estimated for such SINIS devices.
Author
Mikhail Tarasov
National Research University of Electronic Technology (MIET)
Russian Academy of Sciences
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Valerian S. Edelman
Russian Academy of Sciences
Sumedh Mahashabde
University of Oxford
M. Fominsky
National Research University of Electronic Technology (MIET)
S. Lemzyakov
Moscow Institute of Physics and Technology
Russian Academy of Sciences
Artem Chekushkin
National Research University of Electronic Technology (MIET)
Moscow Institute of Physics and Technology
R. Yusupov
National Research University of Electronic Technology (MIET)
Moscow Institute of Physics and Technology
Dag Winkler
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Avgust Yurgens
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Published in
Journal of Physics: Conference Series
17426588 (ISSN) 17426596 (eISSN)
Vol. 969 Issue 1 art. no 012088Conference
28th International Conference on Low Temperature Physics, LT 2018
Gothenburg, Sweden, 2017-08-08 - 2017-08-15
Gothenburg, Sweden, 2017-08-08 - 2017-08-15
Research Project(s)
Two dimensional materials in radiation detectors
Swedish Research Council (VR) (2014-5468), 2015-01-01 -- 2016-12-31.
Categorizing
Subject Categories (SSIF 2011)
Energy Engineering
Other Physics Topics
Condensed Matter Physics
Identifiers
DOI
10.1088/1742-6596/969/1/012088