A 110-170 GHz transceiver in 130 nm SiGe BiCMOS technology for FMCW applications
Paper in proceeding, 2018
A 110-170 GHz transceiver is designed and fabricated in a 130 nm SiGe BiCMOS technology. The transceiver operates as an amplifier for transmitting and simultaneously as a fundamental mixer for receiving. In a measured frequency range of 120-160 GHz, a typical output power of 0 dBm is obtained with an input power of +3 dBm. As a fundamental mixer, a conversion gain of -9 dB is obtained at 130 GHz LO, and a noise figure of 19 dB is achieved. The transceiver is successfully demonstrated as a FMCW radar front-end for distance measurement. With a chirp rate of 1.6×1012 Hz/s and a bandwidth of 14.4 GHz, a range resolution of 2.8 cm is demonstrated, and transmission test is shown on different objects.
HBT
130 nm
mixer
SiGe
chirp rate
BiCMOS
range resolution
amplifier
power
radar front-end
conversion gain
noise figure
transmission
transceiver
FMCW
Author
[Person d585b193-58de-4db4-b832-8ed37f84bf88 not found]
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
[Person 71943b8f-f239-43b4-bfdf-9c5f9260169f not found]
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
[Person d9d50601-e763-4d94-9fa8-6910fd930149 not found]
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
[Person 1c44d788-3c5d-4911-8825-cb08fb7f6500 not found]
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
[Person ee6c1c7c-4a22-494d-b363-457c26b1680f not found]
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Proceedings of SPIE - The International Society for Optical Engineering
0277786X (ISSN) 1996756X (eISSN)
Vol. 10800 108000I978-151062183-1 (ISBN)
Millimetre Wave and Terahertz Sensors and Technology XI 2018
Berlin, Germany,
Berlin, Germany,
Subject Categories (SSIF 2011)
Telecommunications
Signal Processing
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1117/12.2318791