A 110-170 GHz transceiver in 130 nm SiGe BiCMOS technology for FMCW applications
Paper in proceeding, 2018
A 110-170 GHz transceiver is designed and fabricated in a 130 nm SiGe BiCMOS technology. The transceiver operates as an amplifier for transmitting and simultaneously as a fundamental mixer for receiving. In a measured frequency range of 120-160 GHz, a typical output power of 0 dBm is obtained with an input power of +3 dBm. As a fundamental mixer, a conversion gain of -9 dB is obtained at 130 GHz LO, and a noise figure of 19 dB is achieved. The transceiver is successfully demonstrated as a FMCW radar front-end for distance measurement. With a chirp rate of 1.6×1012 Hz/s and a bandwidth of 14.4 GHz, a range resolution of 2.8 cm is demonstrated, and transmission test is shown on different objects.
HBT
130 nm
mixer
SiGe
chirp rate
BiCMOS
range resolution
amplifier
power
radar front-end
conversion gain
noise figure
transmission
transceiver
FMCW
Author
Yu Yan
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Tomas Bryllert
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Vessen Vassilev
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Sten Gunnarsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Proceedings of SPIE - The International Society for Optical Engineering
0277786X (ISSN) 1996756X (eISSN)
Vol. 10800 108000I978-151062183-1 (ISBN)
Millimetre Wave and Terahertz Sensors and Technology XI 2018
Berlin, Germany,
Berlin, Germany,
Subject Categories
Telecommunications
Signal Processing
Other Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1117/12.2318791