Behavior of Raman modes in InPBi alloys under hydrostatic pressure
Journal article, 2019
Raman spectra of InPBi alloys with bismuth amount 0.3%-2.0% were measured under hydrostatic pressure in diamond anvil cell up to ∼4 GPa at room temperature. Two bismuth related Raman modes were identified and their evolutions under pressure were studied. The linear pressure coefficients of these two modes are determined to be 1.292 and 2.169 cm -1 /GPa, respectively. The different behaviors of these two modes under pressure suggest that they may have distinct origins. InP related Raman modes were also investigated including two InP related modes caused by Bi doping.
Author
Changcheng Zheng
Chinese Academy of Sciences
Xi'an Jiaotong-Liverpool University
Xiaohu Wang
Tsinghua University
Jiqiang Ning
Chinese Academy of Sciences
Kun Ding
Chinese Academy of Sciences
Baoquan Sun
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Chinese Academy of Sciences
S. Xu
The University of Hong Kong
AIP Advances
2158-3226 (ISSN) 21583226 (eISSN)
Vol. 9 3 035120Subject Categories
Physiology
Other Materials Engineering
Condensed Matter Physics
DOI
10.1063/1.5085132