Progress on III-V-Bi Alloys and Light Emitting Devices
Paper in proceeding, 2018
In this invited talk, we will present some recent progresses on epitaxial growth of III-V-Bi alloys and light emitting devices. Aluminum containing bismides including AlAsBi and AlSbBi have been epitaxially grown for the first time and their physical properties will be reported. New designs of using delta-doping in quantum wells are investigated to effectively extend light emission wavelength. Finally, GaAs based light emitting diode will be presented.
AlAsBi
light emitting diode
AlSbBi
molecular beam epitaxy
dilute bismide
laser diode
Author
Shu Min Wang
Chinese Academy of Sciences
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
L. Yue
Chinese Academy of Sciences
L Wang
Chinese Academy of Sciences
Yanchao Zhang
Chinese Academy of Sciences
ShanghaiTech University
Chang Wang
ShanghaiTech University
Chinese Academy of Sciences
Xiaolei Zhang
ShanghaiTech University
Chinese Academy of Sciences
Chaodan Chi
Chinese Academy of Sciences
Hao Liang
Chinese Academy of Sciences
Xiaoyan Wu
Chinese Academy of Sciences
J. J. Liu
Chinese Academy of Sciences
W. W. Pan
Chinese Academy of Sciences
Chunfang Cao
Chinese Academy of Sciences
Y Li
Chinese Academy of Sciences
International Conference on Transparent Optical Networks
21627339 (ISSN)
Vol. 2018-July 8473745
20th International Conference on Transparent Optical Networks, ICTON 2018
Bucharest, Romania,
Bucharest, Romania,
Subject Categories
Architectural Engineering
Other Physics Topics
Condensed Matter Physics
DOI
10.1109/ICTON.2018.8473745