A digital-controlled SiC-based solid state circuit breaker with soft switch-off method for DC power system
Journal article, 2019

Due to the lower on-state resistance, direct current (DC) solid state circuit breakers (SSCBs) based on silicon-carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) can reduce on-state losses and the investment of the cooling system when compared to breakers based on silicon (Si) MOSFETs. However, SiC MOSFETs, with smaller die area and higher current density, lead to weaker short-circuit ability, shorter short-circuit withstand time and higher protection requirements. To improve the reliability and short-circuit capability of SiC-based DC solid state circuit breakers, the short-circuit fault mechanisms of Si MOSFETs and SiC MOSFETs are revealed. Combined with the desaturation detection (DESAT), a “soft turn-off” short-circuit protection method based on source parasitic inductor is proposed. When the DESAT protection is activated, the “soft turn-off” method can protect the MOSFET against short-circuit and overcurrent. The proposed SSCB, combined with the flexibility of the DSP, has the μs-scale ultrafast response time to overcurrent detection. Finally, the effectiveness of the proposed method is validated by the experimental platform. The method can reduce the voltage stress of the power device, and it can also suppress the short-circuit current.

Soft turn-off

Reliability

SiC MOSFETs

Desaturation detection

Solid state circuit breakers

Author

Haihong Qin

Nanjing University of Aeronautics and Astronautics

Yubin Mo

Nanjing University of Aeronautics and Astronautics

Qian Xun

Chalmers, Electrical Engineering, Electric Power Engineering, Electrical Machines and Power Electronics

Ying Zhang

Nanjing University of Aeronautics and Astronautics

Yaowen Dong

Nanjing University of Aeronautics and Astronautics

Electronics (Switzerland)

20799292 (eISSN)

Vol. 8 8 837

Subject Categories

Other Chemical Engineering

Embedded Systems

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.3390/electronics8080837

More information

Latest update

11/7/2019