Bi ultra-thin crystalline films on InAs(111)A and B substrates: a combined core-level and valence-band angle-resolved and dichroic photoemission study
Journal article, 2019

The growth of Bi on both the In-terminated (A) face and the As-terminated (B) face of InAs(111) has been investigated by low-energy electron diffraction, scanning tunnelling microscopy, and photoelectron spectroscopy using synchrotron radiation. The changes upon Bi deposition of the In 4d and Bi 5d(5/2) photoelectron signals allow to get a comprehensive picture of the Bi/InAs(111) interface. From the early stage the Bi growth on the A face is epitaxial, contrary to that on the B face that proceeds via the formation of islands. Angle-resolved photoelectron spectra show that the electronic structure of a Bi deposit of approximate to 10 bi-layers on the A face is identical to that of bulk Bi, while more than approximate to 30 bi-layers are needed for the B face. Both bulk and surface electronic states observed are well accounted for by fully relativistic ab initio calculations performed using the one-step model of photoemission. These calculations are used to analyse the dichroic photoemission data recorded in the vicinity of the Fermi level around the (Gamma) over bar point of the Brillouin zone.

ultra-thin films

indium arsenide

angle-resolved photoemission

circular dichroism

bismuth

growth

electronic structure calculations

Author

L. Nicolai

University of West Bohemia

J-M Mariot

Sorbonne University

SOLEIL Synchrotron

U. Djukic

University of Cergy-Pontoise

W. Wang

Lund University

O. Heckmann

University of Cergy-Pontoise

University Paris-Saclay

M. C. Richter

University of Cergy-Pontoise

University Paris-Saclay

Janusz Kanski

Chalmers, Physics

M. Leandersson

Lund University

T. Balasubramanian

Lund University

J. Sadowski

Linnaeus University

Polish Academy of Sciences

University of Warsaw

J. Braun

Ludwig Maximilian University of Munich (LMU)

H. Ebert

Ludwig Maximilian University of Munich (LMU)

I. Vobornik

National Research Council of Italy (CNR)

J. Fujii

National Research Council of Italy (CNR)

J. Minar

University of West Bohemia

K. Hricovini

University of Cergy-Pontoise

University Paris-Saclay

New Journal of Physics

1367-2630 (ISSN)

Vol. 21 12 123012

Subject Categories

Atom and Molecular Physics and Optics

Materials Chemistry

Condensed Matter Physics

DOI

10.1088/1367-2630/ab5c14

More information

Latest update

10/9/2023