Stress and strain analysis of Si-based III - V template fabricated by ion-slicing
Journal article, 2020
Strain and stress were simulated using finite element method (FEM) for three III-V-on-Insulator (III-VOI) structures, i.e., InP/SiO2/Si, InP/Al2O3/SiO2/Si, and GaAs/Al2O3/SiO2/Si, fabricated by ion-slicing as the substrates for optoelectronic devices on Si. The thermal strain/stress imposes no risk for optoelectronic structures grown on InPOI at a normal growth temperature using molecular beam epitaxy. Structures grown on GaAsOI are more dangerous than those on InPOI due to a limited critical thickness. The intermedia Al2O3 layer was intended to increase the adherence while it brings in the largest risk. The simulated results reveal thermal stress on Al2O3 over 1 GPa, which is much higher than its critical stress for interfacial fracture. InPOI without an Al2O3 layer is more suitable as the substrate for optoelectronic integration on Si.
Author
Shuyan Zhao
Chinese Academy of Sciences
Y Song
Chinese Academy of Sciences
Hao Liang
Chinese Academy of Sciences
Tingting Jin
Chinese Academy of Sciences
Jiajie Lin
Chinese Academy of Sciences
Li Yue
Chinese Academy of Sciences
Tiangui You
Chinese Academy of Sciences
Chang Wang
Chinese Academy of Sciences
Xin Ou
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Chinese Academy of Sciences
Chinese Physics B
1674-1056 (ISSN) 20583834 (eISSN)
Vol. 29 7 077303Subject Categories
Applied Mechanics
Other Materials Engineering
Condensed Matter Physics
DOI
10.1088/1674-1056/ab8a35