Stress and strain analysis of Si-based III - V template fabricated by ion-slicing
Journal article, 2020

Strain and stress were simulated using finite element method (FEM) for three III-V-on-Insulator (III-VOI) structures, i.e., InP/SiO2/Si, InP/Al2O3/SiO2/Si, and GaAs/Al2O3/SiO2/Si, fabricated by ion-slicing as the substrates for optoelectronic devices on Si. The thermal strain/stress imposes no risk for optoelectronic structures grown on InPOI at a normal growth temperature using molecular beam epitaxy. Structures grown on GaAsOI are more dangerous than those on InPOI due to a limited critical thickness. The intermedia Al2O3 layer was intended to increase the adherence while it brings in the largest risk. The simulated results reveal thermal stress on Al2O3 over 1 GPa, which is much higher than its critical stress for interfacial fracture. InPOI without an Al2O3 layer is more suitable as the substrate for optoelectronic integration on Si.

Author

Shuyan Zhao

Chinese Academy of Sciences

Y Song

Chinese Academy of Sciences

Hao Liang

Chinese Academy of Sciences

Tingting Jin

Chinese Academy of Sciences

Jiajie Lin

Chinese Academy of Sciences

Li Yue

Chinese Academy of Sciences

Tiangui You

Chinese Academy of Sciences

Chang Wang

Chinese Academy of Sciences

Xin Ou

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Chinese Academy of Sciences

Chinese Physics B

1674-1056 (ISSN)

Vol. 29 7 077303

Subject Categories

Applied Mechanics

Other Materials Engineering

Condensed Matter Physics

DOI

10.1088/1674-1056/ab8a35

More information

Latest update

8/31/2020