Wafer-scale heterogeneous integration InP on trenched Si with a bubble-free interface
Journal article, 2020
Heterogeneous integration of compound semiconductors on a Si platform leads to advanced device applications in the field of Si photonics and high frequency electronics. However, the unavoidable bubbles formed at the bonding interface are detrimental for achieving a high yield of dissimilar semiconductor integration by the direct wafer bonding technology. In this work, lateral outgassing surface trenches (LOTs) are introduced to efficiently inhibit the bubbles. It is found that the chemical reactions in InP-Si bonding are similar to those in Si-Si bonding, and the generated gas can escape via the LOTs. The outgassing efficiency is dominated by LOTs' spacing, and moreover, the relationship between bubble formation and the LOT's structure is well described by a thermodynamic model. With the method explored in this work, a 2-in. bubble-free crystalline InP thin film integrated on the Si substrate with LOTs is obtained by the ion-slicing and wafer bonding technology. The quantum well active region grown on this Si-based InP film shows a superior photoemission efficiency, and it is found to be 65% as compared to its bulk counterpart.
Author
Jiajie Lin
Chinese Academy of Sciences
Tiangui You
Chinese Academy of Sciences
Tingting Jin
Chinese Academy of Sciences
Hao Liang
Chinese Academy of Sciences
Wenjian Wan
Chinese Academy of Sciences
Hao Huang
University of Shanghai for Science and Technology
Chinese Academy of Sciences
Min Zhou
Chinese Academy of Sciences
Fengwen Mu
Waseda University
Youquan Yan
Chinese Academy of Sciences
Kai Huang
Chinese Academy of Sciences
Xiaomeng Zhao
Chinese Academy of Sciences
Jiaxiang Zhang
Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Peng Gao
Tianjin Institute of Power Sources
Xin Ou
Chinese Academy of Sciences
APL Materials
2166-532X (eISSN)
Vol. 8 5 051110Subject Categories
Inorganic Chemistry
Materials Chemistry
Condensed Matter Physics
DOI
10.1063/5.0004427