Fully inkjet-printed two-dimensional material field-effect heterojunctions for wearable and textile electronics
Journal article, 2017

Fully printed wearable electronics based on two-dimensional (2D) material heterojunction
structures also known as heterostructures, such as field-effect transistors, require robust and
reproducible printed multi-layer stacks consisting of active channel, dielectric and conductive
contact layers. Solution processing of graphite and other layered materials provides low-cost
inks enabling printed electronic devices, for example by inkjet printing. However, the limited
quality of the 2D-material inks, the complexity of the layered arrangement, and the lack of a
dielectric 2D-material ink able to operate at room temperature, under strain and after several
washing cycles has impeded the fabrication of electronic devices on textile with fully printed
2D heterostructures. Here we demonstrate fully inkjet-printed 2D-material active heterostructures with graphene and hexagonal-boron nitride (h-BN) inks, and use them to fabricate
all inkjet-printed flexible and washable field-effect transistors on textile, reaching a fieldeffect mobility of ~91 cm2 V−1 s−1
, at low voltage (<5 V). This enables fully inkjet-printed
electronic circuits, such as reprogrammable volatile memory cells, complementary inverters
and OR logic gates

Author

Aida Mansouri

Microwave Electronics

Nature Communications

2041-1723 (ISSN)

Vol. 8 1 1-11 1202 (2017)

Subject Categories

Biophysics

Medical Genetics

Genetics

DOI

10.1038/s41467-017-01210-2

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Created

4/14/2021