Surface potential influence on defect passivation kinetics probed by chromium gated metal-oxide-silicon devices
Journal article, 1999

In this study we present a new scheme for obtaining information on the passivation mechanisms of as-grown Si-SiO2 interface defects by resolving the effects of bias on the defect passivation reaction. This is possible when using chromium gated metal-oxide-silicon devices for which the effect of non-biased passivation is very small compared to devices with for example aluminum gates. It is shown that a negative surface potential promotes the passivation of interface states while a positive surface potential reduces it.

Author

Lars-Åke Ragnarsson

Department of Microelectronics

Per Lundgren

Department of Microelectronics

Chalmers, Applied Physics, Electronics Material and Systems Laboratory

Microelectronic Engineering

0167-9317 (ISSN)

Vol. 48 1-4 219-222

Subject Categories

Materials Chemistry

Other Materials Engineering

Condensed Matter Physics

DOI

10.1016/S0167-9317(99)00374-3

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9/3/2021 2