InAs quantum wells grown on GaP/Si substrate with Ga(In,As)P metamorphic buffers
Journal article, 2022

InAs/In0.83Al0.17As quantum wells have been demonstrated on In0.83Al0.17As metamorphic layers on GaP/Si substrates. The effects of GaxIn1-xP and GaAsyP1-y graded buffer layers on the sample performances are investigated. The sample with GaxIn1-xP metamorphic buffer layer has narrower width in X-ray diffraction reciprocal space maps, indicating less misfit dislocations in the sample. Mid-infrared photoluminescence signals have been observed for both samples at room temperature, while the sample with GaxIn1-xP metamorphic buffer shows stronger photoluminescence intensity at all temperatures. The results indicate the metamorphic buffers with mixed cations show superior effects for the mid-infrared InAs quantum wells on GaP/Si composite substrates.

Quantum wells



Metamorphic buffer


Weiguo Huang

Chinese Academy of Sciences

Yi Gu

Chinese Academy of Sciences

Yu Hang Jin

Chinese Academy of Sciences

Bowen Liu

Chinese Academy of Sciences

Qian Gong

Chinese Academy of Sciences

H. Huang

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

Y. J. Ma

Chinese Academy of Sciences

Yonggang Zhang

Chinese Academy of Sciences

Hongwai Yu Haomibo Xuebao/Journal of Infrared and Millimeter Waves

1001-9014 (ISSN)

Vol. 41 1 253-261

Subject Categories


Materials Chemistry

Condensed Matter Physics



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