Effects of adsorbed molecular ordering to the superconductivity of a two-dimensional atomic layer crystal
Journal article, 2023
The effect of 3,4,9,10-perylenetetracarboxylic dianhydride (PTCDA) adsorption on the physical properties of the two-dimensional (2D) atomic layer superconductor (ALSC) In/Si(111)-(7×3) has been studied by angle-resolved photoelectron spectroscopy, transport measurements, and scanning tunneling microscopy. Hole doping from the adsorbed molecules has been reported to increase the superconducting transition temperature Tc of this ALSC, and the molecular spin tends to decrease it. Owing to its large electron affinity and its nonexistent spin state, the adsorption of PTCDA was expected to increase Tc. However, the PTCDA adsorption dopes only a small number of holes in the In layers and causes a suppression of Tc with a sharp increase in the normal-state sheet resistance followed by an insulating transition. Taking the disordering of the arrangement of PTCDA into account, we conclude that the increase in resistance is due to the localization effect originating from the random potential that is induced by the disordered PTCDA molecules. The present result also indicates the importance of the crystallinity of a 2D molecular film adsorbed on ALSCs.
Author
Shunsuke Inagaki
Osaka University
Narunori Ebara
Osaka University
Takahiro Kobayashi
Osaka University
Ryota Itaya
Osaka University
Kenta Yokota
Hokkaido University
National Institute for Materials Science (NIMS)
Isamu Yamamoto
Saga University
Jacek Osiecki
MAX IV Laboratory
Khadiza Ali
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
C. M. Polley
MAX IV Laboratory
H. M. Zhang
Karlstad University
L. S.O. Johansson
Karlstad University
Takashi Uchihashi
National Institute for Materials Science (NIMS)
Hokkaido University
Kazuyuki Sakamoto
Osaka University
Center for Spintronics Research Network
Physical Review Materials
24759953 (eISSN)
Vol. 7 2 024805Subject Categories
Inorganic Chemistry
Physical Chemistry
Condensed Matter Physics
DOI
10.1103/PhysRevMaterials.7.024805