Waveguide Integration and Packaging of a Multi-Channel Power Amplifier in a SiGe BiCMOS Technology for mm-Wave Applications

Journal article, 2024

This paper introduces the packaging and integration of a multi-channel silicon-based power amplifier (PA) operating in the range 70 - 74 GHz into a metal waveguide (WG) using a contactless IC-to-WG transition. This contactless transition facilitates the IC-WG connection and incorporates a spatial power combiner and an impedance-matching network. The paper outlines a comprehensive step-by-step design procedure for the PA and the waveguide. This procedure encompasses an IC-WG joint-design approach for designing input and output matching networks and spatial power splitter and combiner. Based on simulations and experimental results, this paper discusses the need to include the packaging design methodology in the overall design process, the effect of packaging technology, and their tolerances on the prototype performance. The initial PA-WG prototype results show a measured saturated output power of 0 dBm and a peak power gain of 11 dB at 72 GHz.