Structure and electronic properties of stable facets in the 2D material hexagonal boron nitride (hBN) on curved platinum
Journal article, 2022

A hexagonal boron nitride (hBN) monolayer was grown on a curved crystal c-Pt(331) substrate including all vicinal surfaces between Pt(111) and Pt(110) faces. The surface structure has been studied by a combination of low-energy electron diffraction (LEED) and scanning tunnelling microscopy (STM). We observed that the hBN monolayer covers the entire curved crystal, but induces a faceting subsequent to the growth. We encountered (111), (221), (441), (991), and (110) as stable facets. We assign this faceting to two factors i) a better lattice coincidence and ii) the existence of local covalent bonds and non-local Van der Waals interactions. The electronic structure was characterized by near-edge x-ray absorption fine structure (NEXAFS), X-ray photoemission spectroscopy and angle-resolved photoemission spectroscopy (ARPES). The hBN/Pt(111) has the weakest interacting overlayer system, while the hBN on vicinal surfaces is more strongly bound to the Pt substrate. Additionally, we determined using angle-resolved photoemission measurements (ARPES) that the π band shifts downward when going away from the hBN/Pt(111) surface towards hBN/Pt(110). In the latter case, the π band shift is the largest.

Curved crystal

Epitaxy

Hexagonal boron nitride (h-BN) monolayer

Stable facets

2D materials

Author

Alaa Mohammed Idris Bakhit

University of the Basque Country (UPV/EHU)

Spanish National Research Council (CSIC)

Khadiza Ali

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Donostia International Physics Center

Anna A. Makarova

Freie Universität Berlin

Igor Píš

National Research Council of Italy (CNR)

Federica Bondino

National Research Council of Italy (CNR)

F. Schiller

Donostia International Physics Center

Spanish National Research Council (CSIC)

Published in

Science Talks

27725693 (eISSN)

Vol. 4 art. no 100071

Categorizing

Subject Categories (SSIF 2011)

Condensed Matter Physics

Identifiers

DOI

10.1016/j.sctalk.2022.100071

More information

Latest update

3/19/2025