A 0.3 THz Transmitter in 90-nm BiCMOS Technology for Energy-Efficient High Data Rate Communication
Paper in proceeding, 2025
In this work, an energy-efficiency high data rate transmitter at 0.3 THz is presented. The design is implemented in Infineon’s 90-nm SiGe BiCMOS technology. The 3-dB RF bandwidth is between 254–303 GHz, and the 3-dB IF bandwidth is 32 GHz. The transmitter is evaluated to support OOK data rates up to 32 Gbps, and 40 Gbps QPSK using an IF carrier. The DC power consumption is 285 mW.
Author
Frida Strömbeck
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Yu Yan
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz
2162-2027 (ISSN) 2162-2035 (eISSN)
9798350378832 (ISBN)
2025 50th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
Helsinki, Finland,
Helsinki, Finland,
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Swedish Research Council (VR) (2020-06187), 2021-01-01 -- 2024-12-31.
European Core Technologies for Next Generation Communication-Computing Hardware
European Commission (EC) (EC/HE/101092598), 2023-01-01 -- 2025-12-31.
Towards Energy-Efficient Tbps Wireless Links (TeraGreen)
European Commission (EC) (EC/HC/101139117), 2024-01-01 -- 2028-06-30.
Subject Categories (SSIF 2025)
Other Electrical Engineering, Electronic Engineering, Information Engineering
Communication Systems
DOI
10.1109/IRMMW-THz61557.2025.11319813
ISBN
9798350378832