High-repetition-rate GaAs-on-SiN mode-locked laser using a Fabry-Pérot cavity

Journal article, 2026

We demonstrate a 23.3 GHz GaAs-on-SiN mode-locked laser heterogeneously integrated on a commercial SiN platform using micro-transfer printing. A compact Fabry-P & eacute;rot cavity with a central saturable absorber enables colliding-pulse, second-harmonic mode locking. The device delivers up to 1 mW on-chip optical power from a single output port and generates eight comb lines within a 10 dB optical bandwidth. The pulse-forming operation is confirmed by autocorrelation measurements, yielding a deconvolved pulse width of 4.8 ps. This approach provides a scalable route toward electrically pumped high-repetition-rate pulse sources for nonlinear SiN photonic circuits.
(c) 2026 Optica Publishing Group. All rights, including for text and data mining (TDM), Artificial Intelligence (AI) training, and similar technologies, are reserved.