Design of highly efficient, high output power, L-band class D-1 RF power amplifiers using GaN MESFET devices
Paper in proceedings, 2007

Author

Ulf Gustavsson

T. Lejon

Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2)

Proc. European Conference on Wireless Technologies

371-374

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

More information

Created

10/8/2017