Characterization of deep levels and quantum confined energy levels in InAs/GaAs quantum dot structures by electrical methods

M Kaniewska; Olof Engström; M Kaczmarczyk; G Zaremba

Characterization of deep levels and quantum confined energy levels in InAs/GaAs quantum dot structures by electrical methods
Paper in proceeding, 2008

Author

M Kaniewska

Olof Engström

Chalmers, Applied Physics, Physical Electronics

Other publications Research

M Kaczmarczyk

G Zaremba

ICCE 16, Kunming, China, July 2008

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Other Engineering and Technologies

Other Engineering and Technologies not elsewhere specified

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10/7/2017

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Characterization of deep levels and quantum confined energy levels in InAs/GaAs quantum dot structures by electrical methods Paper in proceeding, 2008