Leakage current effects on C-V plots of high- k metal-oxide-semiconductor capacitors
Journal article, 2009
Author
Y. Lu
University of Liverpool
S. Hall
University of Liverpool
L. Z. Tan
University of Liverpool
I. Z. Mitrovic
University of Liverpool
W.M. Davey
University of Liverpool
Bahman Raeissi
Chalmers, Applied Physics, Physical Electronics
Olof Engström
Chalmers, Applied Physics, Physical Electronics
K. Cherkaoui
Tyndall National Institute at National University of Ireland, Cork
S Monaghan
Tyndall National Institute at National University of Ireland, Cork
P.K. Hurley
Tyndall National Institute at National University of Ireland, Cork
H.D.B. Gottlob
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
M.C. Lemme
Gesellschaft fur Angewandte Mikro- und Optoelektronik mbH
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
21662746 (ISSN) 21662754 (eISSN)
Vol. 27 1 352-355Subject Categories
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1116/1.3025910