Bistable nanoelectromechanical devices
Journal article, 2004

The force interactions of silicon and germanium nanowires with gold electrodes were analyzed. The current voltage data showed linear behavior between gold electrode and silicon nanowires but for germanium nanowires, they were point of contact dependant. It was found that TEM-STM demonstrated bistable silicon and germanium nanowire based nanoelectromechanical programable read-only memory (NEMPROM) devices. Analysis shows that the devices exhibited low switching potential and high stability, that made them ideal low-leakage electronic devices.


K.J. Ziegler

University College Cork

D.M. Lyons

University College Cork

JD. Holmes

University College Cork

Donats Érts

University of Latvia

B. Polyakov

University of Latvia

Håkan Olin

Chalmers, Department of Experimental Physics

Krister Svensson

Chalmers, Department of Experimental Physics, Solid State Physics

Eva Olsson

Chalmers, Department of Experimental Physics, Microscopy and Microanalysis

Applied Physics Letters

0003-6951 (ISSN) 1077-3118 (eISSN)

Vol. 84 20 4074-4076

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Other Engineering and Technologies

Physical Sciences



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