Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model

Christian Fager; J.C. Pedro; N.B. Carvalho; Herbert Zirath

Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model
Journal article, 2002

Author

Christian Fager

Department of Microelectronics

Other publications Research

J.C. Pedro

N.B. Carvalho

Herbert Zirath

Department of Microelectronics

Other publications Research

IEEE Transactions on Microwave Theory and Techniques

Vol. 50 Dec. 2834-42

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

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Created

10/7/2017

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Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model Journal article, 2002