MOSFET Modeling Adapted for Switched Applications Using a State-Space Approach and Internal Capacitance Characterization
Paper in proceedings, 2009

This paper presents a new approach to MOSFET modeling using a state-space technique. The model is based on discrete elements whose values are extracted from measurements, datasheet parameters and SPICEĀ® equations. The switching characteristics of the component are strongly determined by the gate-drain capacitance (CGD). With help of thorough impedance measurements, characterization of this capacitance as a function of the applied external voltages is possible. Simulations and measurements show good agreement and the model gives possibilities for e.g. controller design thanks to the state-space implementation.

Author

Andreas Henriksson

Chalmers, Energy and Environment, Electric Power Engineering

Torbjörn Thiringer

Chalmers, Energy and Environment, Electric Power Engineering

PEDS 2009 - The Eighth International Conference on Power Electronics and Drive Systems November 2-5, 2009, Taipei, Taiwan, R.O.C

1107-1112

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/PEDS.2009.5385798

ISBN

978-142444166-2

More information

Created

10/8/2017