High CW power 0.3 um gate AlGaN/GaN HEMTs grown by MBE on sapphire
Paper in proceedings, 2004

Author

Vincent Desmaris

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Joakim Eriksson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Niklas Rorsman

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Materials Science Forum

Vol. 457-460 2 1629-

Subject Categories

Other Engineering and Technologies not elsewhere specified

Other Electrical Engineering, Electronic Engineering, Information Engineering

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Created

10/7/2017