GaSb/GaAs quantum dot systems: In situ synchrotron radiation x-ray photoelectron spectroscopy study
Journal article, 2005

GaSb/GaAs quantum dot systems are fabricated using MBE under various growth modes. The as-grown samples are studied with in situ synchrotron radiation XPS covering the As 3d, Sb 4d and Ga 3d core levels and the valence band region. The XPS spectra show dramatic changes with the growth modes, reflecting changes in the local electronic structure and chemical environments of the surface and interface atoms in both quantum dots and wetting layer. A quantum dot specific contribution near the valence band maximum is identified and related to the hole accumulation process. Local valence band offsets measured in the GaSb/GaAs systems evolve over the interface region and depend on the growth modes, which adds another degree of freedom to band engineering on the nanoscale.

Author

V. N. Strocov

Paul Scherrer Institut

University of Augsburg

G. E. Cirlin

Russian Academy of Sciences

Max Planck Institute

J. Sadowski

Polish Academy of Sciences

Lund University

Janusz Kanski

University of Gothenburg

R. Claessen

University of Augsburg

Nanotechnology

0957-4484 (ISSN) 1361-6528 (eISSN)

Vol. 16 8 1326-1334

Subject Categories

Other Engineering and Technologies

DOI

10.1088/0957-4484/16/8/058

More information

Latest update

10/30/2018