Processing and Characterization of AlGaN/GaN HEMTs on Sapphire
Licentiate thesis, 2004


Vincent Desmaris

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

High CW power 0.3 um gate AlGaN/GaN HEMTs grown by MBE on sapphire

Materials Science Forum,; Vol. 457-460(2004)p. 1629-

Paper in proceedings

Low-resistance Si/Ti/Al/Ni/Au multilayer ohmic contacts to undoped AlGaN/GaN heterostructures

Electrochemical and Solid-State Letters,; Vol. 7(2004)p. G72-

Journal article

C-Band Linear Resistive Wide Bandgap FET Mixers

IEEE MTT-S International Microwave Symposium Digest,; Vol. 2(2003)p. 8-

Paper in proceedings

Research and development of AlGaN/GaN HEMTs

GHZ2001,; (2001)

Paper in proceedings

Subject Categories

Other Engineering and Technologies not elsewhere specified

Other Electrical Engineering, Electronic Engineering, Information Engineering

Technical report L - School of Electrical and Computer Engineering, Chalmers University of Technology. : 476L

More information