Excess Dissipation in a Single-Electron Box: The Sisyphus Resistance
Journal article, 2010
We present measurements of the ac response of a single-electron box (SEB). We apply a radio frequency signal with a Frequency larger than the tunneling rate and drive the system out of equilibrium. We observe much more dissipation in the SEB then one would expect from a simple circuit model, We can explain this in terms of a mechanism that we call the Sisyphus resistance. The Sisyphus resistance has a strong gate dependence which can be used for electrometery applications.
rf-reflectometry
Dissipation
transistor
superconducting qubit
single-electron box
interferometry
Sisyphus resistance
Author
Fredrik Persson
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Christopher Wilson
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Martin Sandberg
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Göran Johansson
Chalmers, Microtechnology and Nanoscience (MC2), Applied Quantum Physics
Per Delsing
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
Nano Letters
1530-6984 (ISSN) 1530-6992 (eISSN)
Vol. 10 3 953-957Subject Categories
Physical Sciences
DOI
10.1021/nl903887x