Localized States Model of GeS2 Glasses Based on Electronic States of GenSm Clusters Calculated by Using TD-DFT Method
Journal article, 2005

The first-principles calculation based on time dependent - density functional theory (TDDFT) reveals the origin of the molecular electronic structure and its connection to the localized states of the g-GeS2(T-i). The band gaps computed for GenSm clusters representing the local structures and their correlation to the experimental band gaps of g-GexS100-x together with possible model of band-tail states of g-GeS2 have been discussed. According to the observed results we propose to consider the band-gap states of g-GexS100-x as superposition of electronic states of GenSm clusters. The type and concentration of these clusters are compositionally-dependent and influenced by technological conditions used for glass preparation.


R. Holomb

V. Mitsa

Patrik Johansson

Chalmers, Applied Physics, Condensed Matter Physics

Journal of Optoelectronics and Advanced Materials

1454-4164 (ISSN)

Vol. 7 4 1881-1888

Subject Categories

Other Engineering and Technologies

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