A Compact Cascode Power Amplifier in 45-nm CMOS for 60-GHz Wireless Systems
Paper in proceedings, 2009

This paper presents a power amplifier in 45nm CMOS technology operating in the 50 to 60-GHz frequency range. It uses a single-ended topology with two cascode stages. A gain of 19.6 dB is obtained at 54 GHz where the gain peaks, and 17 dB at 60 GHz. The measured output-referred 1-dB compression point is 8.7 dBm at 60 GHz and a supply voltage of 2.1 V, and the saturated output power is 13.5 dBm. The bias conditions are shown to be reliable through lifetime measurements. The active chip-area measures 160 mu m x 110 mu m.

45-nm CMOS technology

Power amplifiers

reliability

CMOSFET amplifiers

60 GHz

Author

Torgil Kjellberg

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Morteza Abbasi

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Mattias Ferndahl

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

A. de Graauw

E. van der Heijden

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

2009 ANNUAL IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2009 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2009

1550-8781 (ISSN)

95-98

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

ISBN

978-1-4244-5260-6

More information

Created

10/7/2017