Core-level shifts of the c(8 x 2)-reconstructed InAs(100) and InSb(100) surfaces
Journal article, 2010

We have studied In-stabilized c(8 2)-reconstructed InAs(1 0 0) and InSb(1 0 0) semiconductor surfaces, which play a key role in growing improved III-V interfaces for electronics devices, by core-level photoelectron spectroscopy and first-principles calculations. The calculated surface core-level shifts (SCLSs) for the zeta and zeta a models, which have been previously established to describe the atomic structures of the III-V(1 00)c(8 x 2) surfaces, yield hitherto not reported interpretation for the As 3d, In 4d, and Sb 4d core-level spectra of the III-V(1 00)c(8 x 2) surfaces, concerning the number and origins of SCLSs. The fitting analysis of the measured spectra with the calculated zeta and zeta a SCLS values shows that the InSb spectra are reproduced by the zeta SCLSs better than by the zeta a SCLSs. Interestingly, the zeta a fits agree better with the InAs spectra than the zeta fits do, indicating that the zeta a model describes the InAs surface better than the InSb surface. These results are in agreement with previous X-ray diffraction data. Furthermore, an introduction of the complete-screening model, which includes both the initial and final state effects, does not improve the fitting of the InSb spectra, proposing the suitability of the initial-state model for the SCLSs of the III-V(1 0 0)c(8 x 2) surfaces. The found SCLSs are discussed with the ab initio on-site charges. (C) 2010 Elsevier B.V. All rights reserved.

ADSORPTION

PHOTOEMISSION

Surface reconstruction

Surface core-level shift (SCLS)

INITIO MOLECULAR-DYNAMICS

METHOD

AUGMENTED-WAVE

Indium

spectroscopy

RECONSTRUCTION

COMPOUND SEMICONDUCTORS

TOTAL-ENERGY CALCULATIONS

GAAS(001) SURFACE

BASIS-SET

arsenide (InAs)

Synchrotron radiation photoelectron

CHARGE-TRANSFER

Ab initio calculations

Indium antimonide (InSb)

Author

P. Laukkanen

Tampere University of Technology

University of Turku

M. P. J. Punkkinen

University of Turku

Royal Institute of Technology (KTH)

M. Ahola-Tuomi

University of Turku

J. Lang

University of Turku

K. Schulte

Lund University

A. Pietzsch

Lund University

M. Kuzmin

University of Turku

Russian Academy of Sciences

J. Sadowski

Polish Academy of Sciences

Lund University

Johan Adell

Chalmers, Applied Physics, Solid State Physics

Other publications Research

R. E. Perala

University of Turku

M. Ropo

Åbo Akademi

K. Kokko

University of Turku

L. Vitos

Royal Institute of Technology (KTH)

Hungarian Academy of Sciences

Uppsala University

B. Johansson

Royal Institute of Technology (KTH)

Dalian University of Technology

Uppsala University

M. Pessa

Tampere University of Technology

I. J. Vayrynen

University of Turku

Journal of Electron Spectroscopy and Related Phenomena

0368-2048 (ISSN)

Vol. 177 1 52-57

Subject Categories

Other Engineering and Technologies

DOI

10.1016/j.elspec.2010.02.002

Publication data connected to DOI

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Latest update

10/30/2018

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