Ultrathin (1x2)-Sn layer on GaAs(100) and InAs(100) substrates: A catalyst for removal of amorphous surface oxides
Journal article, 2011
Amorphous surface oxides of III-V semiconductors are harmful in many contexts of device development. Using low-energy electron diffraction and photoelectron spectroscopy, we demonstrate that surface oxides formed at Sn-capped GaAs(100) and InAs(100) surfaces in air are effectively removed by heating. This Sn-mediated oxide desorption procedure results in the initial well-defined Sn-stabilized (1x2) surface even for samples exposed to air for a prolonged time. Based on ab initio calculations we propose that the phenomenon is due to indirect and direct effects of Sn. The Sn-induced surface composition weakens oxygen adsorption.
gaas(001)
interface
passivation
silicon
molecular-beam epitaxy
gaas
Author
P. Laukkanen
University of Turku
Tampere University of Technology
M. P. J. Punkkinen
Russian Academy of Sciences
Royal Institute of Technology (KTH)
University of Turku
J. Lang
University of Turku
M. Tuominen
University of Turku
M. Kuzmin
Lund University
University of Turku
V. Tuominen
University of Turku
J. Dahl
University of Turku
Johan Adell
Polish Academy of Sciences
J. Sadowski
Polish Academy of Sciences
Janusz Kanski
Chalmers, Applied Physics, Solid State Physics
V. Polojarvi
Tampere University of Technology
J. Pakarinen
Technical Research Centre of Finland (VTT)
K. Kokko
University of Turku
M. Guina
Tampere University of Technology
M. Pessa
Tampere University of Technology
I. J. Vayrynen
University of Turku
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 98 23 231908Subject Categories
Other Engineering and Technologies
DOI
10.1063/1.3596702