Monolithically Integrated 200-GHz Double-Slot Antenna and Resistive Mixers in a GaAs-mHEMT MMIC Process
Journal article, 2011

This paper presents the design and characterization of two resistive mixers integrated with a double-slot antenna in a 100-nm GaAs mHEMT technology. With RF frequency varying from 185 to 202 GHz, a typical conversion loss(Lc)of 8.0 dB is measured for the single-ended mixer and a typical Lc of 12.2 dB is obtained from one of the two IF outputs for the single-balanced mixer. Each mixer is integrated with a double-slot antenna and mounted on an Si lens. Incorporating the antenna gain and the conversion loss of the mixer, a typical receiver gain of 15.4 dB is achieved for the integrated antenna with single-ended mixer, and a typical receiver gain of 11.2 dB is obtained for the integrated antenna with single-balanced mixer by measuring one of the two IF outputs. In this paper, a novel method is also proposed and proved to evaluate a moderate to high noise figure (NF) device in millimeter/submillimeter frequency band. The result shows that the single-ended mixer in this paper has an NF around 1.0 dB higher compared to its Lc, and the single-balanced one has an NF about 1.6 dB higher than its Lc at room-temperature operation.

GaAs

monolithic microwave integrated circuit (MMIC)

G-band

metamorphic HEMT (mHEMT)

resistive mixer

noise figure (NF)

Conversion loss

system gain

double-slot antenna

N-times

Author

Yu Yan

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Yogesh Karandikar

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Sten Gunnarsson

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Bahar M. Motlagh

Chalmers

Serguei Cherednichenko

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Ingmar Kallfass

Karlsruhe Institute of Technology (KIT)

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

Arnulf Leuther

Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF

Karlsruhe Institute of Technology (KIT)

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE Transactions on Microwave Theory and Techniques

0018-9480 (ISSN)

Vol. 59 10 2494-2503

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/TMTT.2011.2161326

More information

Latest update

9/10/2018