Andreev tunneling in charge pumping with SINIS turnstiles
Journal article, 2011

We present measurements on hybrid single-electron turnstiles with superconducting leads contacting a normal island (SINIS). We observe Andreev tunneling of electrons influencing the current plateau characteristics of the turnstiles under radio-frequency pumping. The data is well accounted for by numerical simulations. We verify the dependence of the Andreev tunneling rate on the turnstile's charging energy. Increasing the charging energy effectively suppresses the Andreev current.

transport

coulomb-blockade

island

single-electron transistor

junctions

oscillations

reflection

Author

Thomas Aref

Aalto University

Centre for Metrology and Accreditation Finland

Other publications Research

V. F. Maisi

Centre for Metrology and Accreditation Finland

Martin Gustafsson

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Other publications Research

Per Delsing

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Other publications Research

J. Pekola

Aalto University

Europhysics Letters

0295-5075 (ISSN) 1286-4854 (eISSN)

Vol. 96 3

Subject Categories

Physical Sciences

DOI

10.1209/0295-5075/96/37008

Publication data connected to DOI

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Latest update

3/19/2018

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