A comprehensive analysis of IMD behavior in RF CMOS power amplifiers
Journal article, 2004

This paper presents a comprehensive analysis of nonlinear intermodulation distortion (IMD) behavior in RF CMOS power amplifiers (PAs). Separate analyses are presented for small- and large-signal operation regimes. Especially, a new, simple, large-signal behavioral IMD analysis method is presented that allows the mechanisms dominant for IMD generation to be identified and their individual contributions to be studied. By combining these analyses, typical IMD versus input power characteristics of MOSFET PAs can be predicted and understood for different classes of operation. Various measurements made on a 950-MHz RF CMOS PA are used to demonstrate typical behavior and validate the proposed theory. Prediction of IMD using a standard CMOS transistor model is also evaluated and is shown to give good agreement with the measurements.

two-tone measurements





power amplifiers



Christian Fager

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Jose C. Pedro

University of Aveiro

Nuno Carvalho

University of Aveiro

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

F. Fortes

University of Lisbon

M.J. Rosário

University of Lisbon

IEEE Journal of Solid-State Circuits

0018-9200 (ISSN)

Vol. 39 1 24-34

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering



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