A W-and G-band MMIC source using InP HBT technology
Paper in proceedings, 2012

A frequency doubler/quadrupler for W-and G-band application is designed and fabricated utilizing an InP 250nm heterojunction bipolar transistor process. The multiplier is integrated with balanced V-band VCO. The VCO can be tuned between 57 to 61 GHz with average output power of 6 dBm and phase noise lower than 95 dBc/Hz at 1 MHz offset frequency. The circuit VCO plus multiplier can be used as a source with output power of 2dBm in 113-118 GHz bandwidth and 4dBm from 212 to 228 GHz.

Voltage controlled oscillator

Heterojunction bipolar transistor

Differential doubler

Author

Rumen Kozhuharov

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

M. Bao

Ericsson AB

Marcus Gavell

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

Herbert Zirath

Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics

IEEE MTT-S International Microwave Symposium Digest

0149645X (ISSN)

1 - 3 6258435

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/MWSYM.2012.6258435

ISBN

978-1-4673-1087-1

More information

Latest update

11/19/2018