The influence of gate material, SiO2 fabrication method and gate edge effect on interface trap density in 3C-SiC MOS capcitors
Journal article, 2012
Author
T. Gutt
T. Malachowski
H. M. Prewlocki
Olof Engström
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
M. Bakowski
R. Esteve
Materials Science Forum
0255-5476 (ISSN) 16629752 (eISSN)
Vol. 117 109-Subject Categories
Other Materials Engineering
Areas of Advance
Materials Science