Study of IF bandwidth of MgB2 phonon-cooled hot-electron bolometer mixers
Journal article, 2013

A noise bandwidth (NBW) of 6-7 GHz was obtained for Hot-Electron Bolometer (HEB) mixers made of 10 nm MgB2 films. A systematic investigation of the (IF) gain bandwidth as a function of the MgB2 film thickness (30 nm, 15 nm and 10 nm) is also presented. The gain bandwidth (GBW) of 3.4 GHz was measured for a 10 nm film, corresponding to a mixer time constant of 47 ps. For 10 nm films a reduction of the GBW was observed with the reduction of the critical temperature (Tc). Experimental data were analyzed using the two-temperature model. From the theoretical analysis, the electron-phonon time (τe-ph), the phonon escape time (τesc) and the electron and phonon specific heats (ce, cph) were extrapolated giving the first model for HEB mixers of MgB2 films.

terahertz

mixers

HEB

superconductor

Bolometer

gain bandwidth

Author

Stella Bevilacqua

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Serguei Cherednichenko

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Vladimir Drakinskiy

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Hiroyuki Shibata

Nippon Telegraph and Telephone Corporation

Yasuhiro Tokura

Nippon Telegraph and Telephone Corporation

Jan Stake

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

IEEE Transactions on Terahertz Science and Technology

2156-342X (ISSN)

Vol. 3 4 409-415 6492160

Areas of Advance

Information and Communication Technology

Nanoscience and Nanotechnology (2010-2017)

Subject Categories

Electrical Engineering, Electronic Engineering, Information Engineering

Nano Technology

Infrastructure

Nanofabrication Laboratory

DOI

10.1109/TTHZ.2013.2252266

More information

Created

10/7/2017