Contributions of point defects, chemical disorder, and thermal vibrations to electronic properties of Cd1-xZnxTe alloys
Journal article, 2013

We present a first-principles study based on density functional theory of thermodynamic and electronic properties of the most important intrinsic defects in the semiconductor alloy Cd1-xZnxTe with x < 0.13. The alloy is represented by a set of supercells with disorder on the Cd/Zn sublattice. Defect formation energies as well as electronic and optical transition levels are analyzed as a function of composition. We show that defect formation energies increase with Zn content with the exception of the neutral Te vacancy. This behavior is qualitatively similar to but quantitatively rather different from the effect of volumetric strain on defect properties in pure CdTe. Finally, the relative carrier scattering strengths of point defects, alloy disorder, and phonons are obtained. It is demonstrated that for realistic defect concentrations, carrier mobilities are limited by phonon scattering for temperatures above approximately 150 K.

Author

Daniel Åberg

Paul Erhart

Chalmers, Applied Physics, Materials and Surface Theory

V. Lordi

Physical Review B - Condensed Matter and Materials Physics

1098-0121 (ISSN)

Vol. 88 4 045201-

Subject Categories

Other Physics Topics

Condensed Matter Physics

Areas of Advance

Materials Science

DOI

10.1103/PhysRevB.88.045201

More information

Created

10/8/2017