Optical response of a titanium-based cold-electron bolometer
Journal article, 2013

We present experimental results on the testing of cold-electron bolometer (CEB) detectors comprised of a thin Ti film absorber and two SIN junctions integrated with a planar antenna. The CEB performance was tested in a He-3 sorption cryostat HELIOX-AC-V at bath temperatures of 280-305 mK. The optical response was measured using the hot/cold load method by flipping a Cu reflector opposite a blackbody surface inside a 3 K shield and using a thermal source with variable temperature. In the first experiment, the detector chip was mounted in an optical sample-holder whose aperture was switched towards or away from a blackbody source changing the incident radiation temperature from 3 K to 270 mK. As a result, we measured the optical response to a 3 K/270 mK radiation temperature change. The measured voltage response value for the detector integrated in a double-dipole antenna was Delta V-out = 120 mu V. This corresponds to a noise equivalent power of NEP = V-n/(dV/dP) = 3.5 x 10(-17) W Hz(-1/2), where dV/dP is the voltage to power response obtained from the incoming power estimation based on the Planck formula.

Author

Ernst Otto

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Mikhail Tarasov

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

P. K. Grimes

University of Oxford

Smithsonian Astrophysical Observatory

Artem Chekushkin

Chalmers, Microtechnology and Nanoscience (MC2)

Leonid Kuzmin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

G. Yassin

University of Oxford

Superconductor Science and Technology

0953-2048 (ISSN) 1361-6668 (eISSN)

Vol. 26 8 085020

Subject Categories

Physical Sciences

DOI

10.1088/0953-2048/26/8/085020

More information

Latest update

3/19/2018