Analytical prediction of switching losses in MOSFETs for variable drain-source voltage and current applications
Paper in proceedings, 2013

This paper presents an analytical modeling of a MOSFET during switching operation, aimed at determining the switching losses. Moreover it compares the theoretical results with experimental data. The switching losses are calculated for different DC link voltages and load currents. The stray inductances and capacitances of the MOSFET were considered in the modeling. Besides the parasitic inductance in the circuit was calculated from the measurement and was applied in the loss modeling. It is shown that the switching waveforms obtained from the measurement are in agreement with the simulation results. However, due to the limitations of the drive circuit, the driver circuit output gate signal registered in the measurements had to be used in the simulations.

Author

Hamed Raee

Chalmers, Energy and Environment, Electric Power Engineering

Ali Rabiei

Chalmers, Energy and Environment, Electric Power Engineering

Torbjörn Thiringer

Chalmers, Energy and Environment, Electric Power Engineering

IEEE Conference on Industrial Electronics and Applications (ICIEA 2013)

705-709

Areas of Advance

Transport

Energy

Subject Categories

Other Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1109/ICIEA.2013.6566458

ISBN

978-1-4673-6322-8

More information

Created

10/7/2017