Intrinsically switchable thin film bulk acoustic wave resonators
Journal article, 2014
The concept of the frequency switching in the composite bulk acoustic wave (BAW) resonators based
on the thin films of paraelectric phase ferroelectrics is demonstrated experimentally. The composite
BAW resonators based on the Ba0.25Sr0.75TiO3/SrRuO3/Ba0.25Sr0.75TiO3 multilayer structure are
fabricated and characterized. It is shown that the resonance frequency of the BAW resonators can be
switched more than two times (from 3.6GHz to 7.7 GHz) by changing polarity of the 5V dc bias
voltage at one of the ferroelectric layers. The composite BAW resonators performance is
analyzed using the theory of the dc field induced piezoelectric effect in the paraelectric phase
ferroelectrics.
Author
Andrei Vorobiev
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Spartak Gevorgian
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 104 22 Art. no. 222905- 222905Switchable and tunable composite film bulk acoustic wave resonators (CompFBAR)
Swedish Research Council (VR) (2011-4203), 2012-01-01 -- 2014-12-31.
Subject Categories
Communication Systems
Infrastructure
Nanofabrication Laboratory
DOI
10.1063/1.4881141