Visualisation of edge effects in side-gated graphene nanodevices
Journal article, 2014
Using local scanning electrical techniques we study edge effects in side-gated Hall bar nanodevices made of epitaxial graphene. We demonstrate that lithographically defined edges of the graphene channel exhibit hole conduction within the narrow band of similar to 60-125 nm width, whereas the bulk of the material is electron doped. The effect is the most pronounced when the influence of atmospheric contamination is minimal. We also show that the electronic properties at the edges can be precisely tuned from hole to electron conduction by using moderate strength electrical fields created by side-gates. However, the central part of the channel remains relatively unaffected by the side-gates and retains the bulk properties of graphene.
Author
V. Panchal
National Physical Laboratory (NPL)
Royal Holloway University of London
Arseniy Lartsev
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
A. Manzin
Istituto nazionale di ricerca metrologica (INRiM)
R. Yakimova
Linköping University
A.Y. Tzalenchuk
National Physical Laboratory (NPL)
Royal Holloway University of London
O. Kazakova
National Physical Laboratory (NPL)
Scientific Reports
2045-2322 (ISSN) 20452322 (eISSN)
Vol. 4 5881Subject Categories
Subatomic Physics
Nano Technology
DOI
10.1038/srep05881