Novel InGaPBi single crystal grown by molecular beam epitaxy
Journal article, 2015

InGaPBi crystalline thin films with up to 2.1% bismuth concentration have been grown on GaAs substrates by molecular beam epitaxy. Rutherford backscattering spectrometry confirms that the majority of Bi atoms are located at substitutional lattice sites. The films exhibit good surface, structural, and interface quality, and their strains can be tuned from tensile to compressive by increasing the Bi content. InBi LO and GaBi LO vibrational modes in Raman spectroscopy were observed, and their intensities increased with Bi concentration. A weak photoluminescence signal was observed at 1.78 eV at room temperature for the sample with a Bi content of 0.5%.

Author

L. Yue

Chinese Academy of Sciences

P. Wang

Chinese Academy of Sciences

K. Wang

Chinese Academy of Sciences

X. Y. Wu

Chinese Academy of Sciences

W. W. Pan

Chinese Academy of Sciences

Y. Li

Chinese Academy of Sciences

Y. X. Song

Chinese Academy of Sciences

Yi Gu

Chinese Academy of Sciences

Q. Gong

Chinese Academy of Sciences

Shu Min Wang

Chalmers, Microtechnology and Nanoscience (MC2), Photonics

J. Q. Ning

The University of Hong Kong

S. Xu

The University of Hong Kong

Applied Physics Express

1882-0778 (ISSN)

Vol. 8 4 Art. no. 041201-

Subject Categories

Other Engineering and Technologies

Condensed Matter Physics

DOI

10.7567/apex.8.041201

More information

Latest update

5/23/2018