Effect of photon-assisted Andreev reflection in the accuracy of a SINIS turnstile
Journal article, 2015

We consider a hybrid single-electron transistor constituted by a gate-controlled normal-metal island (N) connected to two voltage-biased superconducting leads (S) by means of two tunnel junctions (SINIS), operated as a turnstile. We show that the exchange of photons between this system and the high-temperature electromagnetic environment where it is embedded enhances Andreev reflection, thereby limiting the single-electron tunneling accuracy.


Angelo di Marco

Université Grenoble Alpes

V. F. Maisi

Centre for Metrology and Accreditation Finland

Aalto University

F. W. J. Hekking

Université Grenoble Alpes

J. Pekola

Aalto University

Physical Review B - Condensed Matter and Materials Physics

1098-0121 (ISSN)

Vol. 92 9

Subject Categories

Nano Technology



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