Intrinsically switchable bulk acoustic wave resonators based on paraelectric films
Paper in proceeding, 2014
The concept of the frequency switching in the composite bulk acoustic wave (BAW) resonators based on the thin films of the paraelectric-phase ferroelectrics is demonstrated experimentally for the first time. The composite BAW resonators based on the Ba
0.25
Sr
0.75
TiO
3
/SrRuO
3
/Ba
0.25
Sr
0.75
TiO
3
multilayer structure are fabricated and characterized. It is shown that the resonance frequency of the BAW resonators can be switched more than two times (from 3.6 GHz to 7.7 GHz) by changing polarity of the 5 V dc bias voltage at the one of the ferroelectric layers. The composite BAW resonators performance is analyzed using the theory of the dc field induced piezoelectric effect in the paraelectric-phase ferroelectrics.
film bulk acoustic resonators
ferroelectric films
frequency control
tunable circuits and devices
Author
Andrei Vorobiev
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Spartak Gevorgian
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
2014 44th European Microwave Conference, EuMC 2014 - Held as Part of the 17th European Microwave Week, EuMW 2014, Rome, Italy, 6-9 October 2014
347-350
978-287487035-4 (ISBN)
Subject Categories
Communication Systems
DOI
10.1109/EuMC.2014.6986441
ISBN
978-287487035-4